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To perform well while consuming less energy, however, these smaller devices require a higher gate capacitance (i.e., ... We show that the 2D perovskite oxide Sr 2 Nb 3 O 10, ...
tom's Hardware on MSN6mon
Intel looks beyond silicon, outlines breakthroughs in atomically-thin 2D transistors, chip packaging, and interconnects at IEDM 2024 - MSNIntel’s disclosures include new materials research that enhances gate-all-around (GAA) transistor scaling and performance ...
Image Credit: ShutterStock/artbase. In the realm of electronic devices, particularly in the domain of memory devices, significant research has centered around non-volatile floating gate ...
Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors. Nature Nanotechnology , 2024; DOI: 10.1038/s41565-024-01706-1 Cite This Page : ...
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