NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM speeds by an order of magnitude for tomorrow’s top-end computing.

Because it integrates higher-density DRAM die, Micron’s HBM3 Gen 2 can be 50 percent bigger (higher capacity) than existing HBM3 DRAM available from other memory vendors, with 2.5x better ...

Samsung will use its latest 32GB DDR5 DRAM memory die to one day create a monstrous 1TB DRAM module for the “AI era”. Based on 12nm-class process technology, the new module is double the size ...

Ask anyone to name a first-generation home computer from the 1970s, and they’ll probably mention the likes of the Altair 8800 and IMSAI 8080. But those iconic machines weren’t the only … ...

We experimentally study memory errors, examine how on-die ECC obfuscates their statistical characteristics, ... We conclude by discussing the critical need for transparency in DRAM reliability ...

Robert Dennard, an engineer at IBM whose invention of dynamic random access memory — DRAM — in the late 1960s made possible personal computers, mobile phones, tablets and video game players ...

DIMMs, bits, and cosmic rays. The basic building block of DRAM (dynamic random access memory) is a storage cell. Each cell comprises a capacitor and a transistor and stores a single bit of data.