Compared with PP, the volume resistivity of the blends shows a decrease at low loading of POE and starts to increase when the POE loading is higher than 15 wt%. After the introduction of POE, the DC ...

Abstract: Although doped regions in semiconductors have been shown to give a different secondary electron yield in low-voltage scanning electron microscopy, the basic interpretation of this contrast ...

Transistors are fundamental to microchips and modern electronics. Invented by Bardeen and Brattain in 1947, their development ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

TEM image of 16nm pitch Ru lines after Ru etch. Ruthenium (Ru) semi-damascene has been originally proposed by imec as an ...

This week, at the 2025 IEEE International Interconnect Technology Conference (IITC), imec presents Ru lines at 16nm pitch ...