Poshun Chiu, Senior Technology & Market Analyst, Compound Semiconductors at Yole Group, discusses the power silicon carbide device market, outlining the anticipated growth to an anticipated $10.

In recent years, silicon carbide (SiC) based devices are increasingly replacing their silicon counterparts in power conversion applications due to their performance superiority. SiC insulated-gate ...

This paper reports research performed on developing and optimizing a process recipe for the plasma etching of deep high-aspect ratio features into silicon carbide (SiC) material using an ...

The simplest form of rhombohedral silicon carbide is unknown. Previous studies of the elusive 9R-SiC have failed to show whether this polytype is stable as a bulk material. Here, we demonstrate that ...

Japanese semiconductor firm Renesas has halted mass production of silicon carbide (SiC) power semiconductors and will now ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Only a select few researchers have the skills for the hottest area in tech. Mark Zuckerberg and his rivals want to hire them—even if it takes pay packages of $100 million.

/ June 24, 2025 / General Atomics Electromagnetic Systems (GA-EMS) announced today that it has reached another significant milestone in the development and testing of its SiGA® Silicon Carbide ...

SAN DIEGO, CALIFORNIA / ACCESS Newswire / June 24, 2025 / General Atomics Electromagnetic Systems (GA-EMS) announced today that it has reached another significant milestone in the development and ...