iDEAL Semiconductor announced its 150-V and 200-V SuperQ MOSFETs that improve conventional silicon designs and rival even WBG materials.

The Vermont Gallium Nitride (V-GaN) Tech Hub has secured $3.4 million in funding from the Northeast Microelectronics Coalition (NEMC) to establish a new microelectronics testing laboratory in South ...

In modern AI data centers and Edge computing environments, high power densities and integration levels are mandatory requirements. To meet the demand for efficient power management solutions, ...

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...

GaN technology is rapidly gaining traction as a cost-effective alternative to SiC, supported by extensive industry research and growing adoption across sectors.

Introduction to FinFET Technology FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in semiconductor technology, marking a significant departure from traditional planar ...