As WBG semiconductors, both GaN and SiC, continue to grow and evolve, so is the need for production and manufacturing of these devices. As the wide bandgap (WBG) semiconductors, both gallium nitride ...

Diodes Incorporated ZXGD3103 is a gate driver IC that is redefining rectification by enabling the use of MOSFETs in place of traditional Schottky diodes. Nowadays in power electronic devices, ...

Today, we have the privilege of chatting with Rudi De Winter, CEO of X-FAB, a leading specialty foundry for analog and mixed-signal semiconductors. Today, we have the privilege of chatting with Rudi ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Linear Complementarity Models, AlN MOSFET, and SiCore Battery! Here’s a RoundUp of this week’s ...

Our speaker is Anton Winkler, a systems engineer and power modules technologist at Texas Instruments. Today, we’re focusing on a key challenge in modern power design: delivering higher efficiency, ...

The use of Linear Complementarity Problems (LCP) is a powerful method for modeling switched systems, particularly in the context of power electronic circuits. Switched circuits are ubiquitous in ...

Dual-diode and single-phase bridge devices (40 A to 240 A) feature low forward voltage drop down to 1.36 V and QC as low as 56 nC. Vishay Intertechnology, Inc. has unveiled 16 new 650 V and 1200 V ...

Low-voltage MOSFETs are essential electronic components in several current applications due to their ability to switch high currents with low power losses. Low-voltage MOSFETs are essential electronic ...

Infineon Technologies has launched a new family of microcontrollers (MCUs), designed to meet the growing demands of industries. With these MCUs, developers will benefit from a shared ecosystem that ...

SDE, the acronym for “Stochastic Differential Equations”, is a framework applicable to power electronics, in particular to the simulation and analysis of noise. SDE, the acronym for “Stochastic ...

The new battery cell delivers an energy density of 370 Wh/kg, coupled with power performance exceeding 3000 W/kg. Amprius Technologies has unveiled its latest innovation, its newest SiCore cell as ...

In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...