Abstract: Galliumnitride (GaN) high electron mobility transistor (HEMT) and silicon (Si) Metal-Oxide semiconductor field effect transistor (MOSFET) power devices exhibit greatly reduced conduction ...

Department of Chemistry, Seoul National University, Seoul 151-747, Korea, National Institute of Standards & Technology, Gaithersburg, Maryland 20899, United States, Department of Chemistry, University ...

Organic light emitting diodes, or OLEDs, are a type of photoluminescence device that utilizes organic compounds to produce ...

TI's RES60A-Q1 eliminates the need for lengthy discrete resistor chains with a single-chip, 1.4-kV, resistor divider that ...

Vishay Intertechnology, Inc. has extended its D2TO35 series of surface-mount thick film power resistors with a new AEC-Q200 ...

Scientists uncovered rare hexagonal silicon forms (2H, 4H, 6H) created by stress and heat, challenging assumptions about this ...

Asahi Kasei has developed the Sunfort TA series of dry film photoresist for next-gen semiconductor packages requiring fine ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...