News

By dumping silicon for indium-oxide, researchers have made tiny transistors that outperform devices previously made.
In the hexagonal wurtzite structure of aluminum nitride, Al ³ ⁺ and N ³ ⁻ are closely arranged through covalent bonds, resulting in high atomic stacking efficiency. Silicon carbide ceramics: The ...
Researchers at IIT-Madras have tasted success in extracting silicon carbide from (simulated) moon soil — a development that could lead to the making of silicon carbide-based composites for ...
Silicon Carbide Battery Market is Segmented by Type (Silicon Carbide Lithium Ion Battery, Silicon Carbide Sodium Ion Battery), by Application (Mechanical Engineering, Automotive Industry ...
General Atomics has manufactured the first batch of full-length SiGA silicon carbide composite tubes designed for pressurised water reactors. The company is developing nuclear fuel rods that can ...
Abstract: For the enhancement of Silicon Carbide ... In this study, the die-level structure of a commercial SiC MOSFET is analyzed. Conventional Scanning Electron Microscopy is compared with a ...
New research from the Ateneo de Manila University could pave the way for more durable versions of silicon carbide (SiC), a ... simulations using Large-scale Atomic/Molecular Massively Parallel ...
The 2300V baseplate-less silicon carbide power modules for 1500V DC Bus applications were developed and launched utilizing Wolfspeed's state-of-the-art 200mm silicon carbide wafers. Wolfspeed also ...
STMicroelectronics has announced it will be investing €5 billion ($5.43bn) in building a high volume 200mm silicon carbide (SiC) chip manufacturing facility for power devices and modules, and test and ...
6b00203. Original atomic resolution micrographs along with statistics used for polytype identification, values used to estimate the step energy of silicon carbide, and outline of polytype formation ...
But, to everyone’s surprise, they observed that atomic layers of gold replaced silicon within the ceramic matrix, leading to the formation of titanium gold carbide — a precursor to goldene.
Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...