News

Facing competition from Chinese rivals and weak demand in industrial and automotive markets, Wolfspeed is preparing to file for Chapter 11 bankruptcy within weeks, according to the Wall Street Journal ...
Infineon, in collaboration with NVIDIA, is developing the next generation of power systems based on a new architecture with ...
Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...
Toshiba Electronics Europe has announced volume shipments of its 3rd generation, 650V SiC MOSFETs in the compact DFN8x8 ...
This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...
Nano2® 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed ...
MEC175xB controllers are compatible with MPLAB ® X Integrated Development Environment (IDE), and supported by example ...
SiC and GaN company Navitas Semiconductor has appointed Cristiano Amoruso to the company’s board of directors, effective ...
Pictured above: Pulsed-mode MOCVD is far better at producing silicon-doped AlN layers than conventional MOCVD, according to current-voltage transmission line measurements using electrodes with 4 µm ...
STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features ...
Sir Colin Humphreys, Professor of Materials Science at Queen Mary University of London, explains that a team of UK scientists ...